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| Preliminary Product Description Sirenza Microdevices NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 5 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Small Signal Gain vs. Frequency NGA-689 DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier See Application Note AN-059 for Alternates OBSOLETE 16 14 dB 12 10 8 6 0 2 4 Frequency GHz Product Features 11.7dB Gain, 18.9 dBm P1dB at 1950Mhz Cascadable 50 ohm: 1.4:1 VSWR Operates from Single Supply Low Thermal Resistance Package Unconditionally Stable Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Units dBm Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz DC - 5000 M Hz DC - 5000 M Hz 2000 M Hz 5.2 72 10.7 Min. Ty p. 19.9 18.9 17.9 36.9 33.6 32.1 11.9 11.7 11.6 5000 1.4:1 1.4:1 6.0 5.8 80 91 6.5 88 13.1 Max. 6 8 Sy mbol P1dB Parameter Output Pow er at 1dB Compression OIP3 Output Third Order Intercept Point dBm G Small Signal Gain dB M Hz dB V mA C/W Bandw idth Determined by Return Loss (>10dB) Input VSWR Output VSWR NF VD ID RTH, j-l Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) Test Conditions: VS = 8 V RBIAS = 27 Ohms ID = 80 mA Typ. TL = 25C OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101442 Rev OBS Preliminary OBSOLETE NGA-689 DC-5.0 GHz 5.8V GaAs HBT Key parameters, at typical operating frequencies: Parameter 500 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation 850 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation 1950 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Ty pical 25C 12.0 37.2 19.9 19.6 19.7 11.9 36.9 19.9 18.5 19.7 11.7 33.6 18.9 16.0 19.5 11.6 32.1 17.9 15.9 19.4 Units dB dBm dBm dB dB dB dBm dBm dB dB dB dBm dBm dB dB dB dBm dBm dB dB Test Condition (ID = 80mA, unless otherwise noted) Tone spacing = 1 M Hz, Pout per tone = 0dBm Tone spacing = 1 M Hz, Pout per tone = 0dBm Tone spacing = 1 M Hz, Pout per tone = 0dBm Tone spacing = 1 M Hz, Pout per tone = 0dBm Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Pow er Max. Junction Temp. (TJ) Operating Temp. Range (TL) Absolute Limit 120 mA 7V +13 dBm +150C -40C to +85C +150C Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101442 Rev OBS Preliminary OBSOLETE NGA-689 DC-5.0 GHz 5.8V GaAs HBT 14 12 10 8 6 4 2 0 0 S21, ID = 80mA, T = 25C 0 -5 dB S12, ID = 80mA, T = 25C dB -10 -15 -20 -25 ` 2 4 GHz 6 8 0 2 4 GHz 6 8 0 -5 dB S11, ID = 80mA, T = 25C 0 -5 dB S22, ID = 80mA, T = 25C -10 -15 -20 -25 0 2 4 GHz -10 -15 -20 -25 6 8 0 2 4 GHz 6 8 Noise Figure Typical Bias Conditions, T = 25C 7.0 6.5 dB 120 100 Id (mA) 6.0 5.5 5.0 4.5 0.5 0.7 0.9 1.1 1.3 GHz 1.5 1.7 1.9 80 60 40 20 0 0 2 4 6 Device Voltage (V) 8 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101442 Rev OBS Preliminary OBSOLETE NGA-689 DC-5.0 GHz 5.8V GaAs HBT S21 vs. Bias, T = 25C IP3 vs. Bias, T = 25C 13.0 12.5 dB 60mA 45 40 35 30 60mA 80mA 100mA 12.0 dB 11.5 11.0 10.5 0.5 1.5 GHz 25 20 2.5 3.5 80mA 100mA 0.5 1.5 GHz 2.5 3.5 P1dB vs. Bias, T = 25C 25 20 dBm dB 13.0 12.5 12.0 11.5 60mA 80mA 100mA S21 vs. Temperature, ID = 80mA 15 10 5 0 0.5 1.5 GHz 25C 11.0 10.5 2.5 3.5 -40C 85C 0.5 1.0 1.5 2.0 GHz 2.5 3.0 3.5 45 40 dBm IP3 vs. Temperature, ID = 80mA 25 20 dBm P1dB vs. Temperature, ID = 80mA 35 30 25C 15 10 5 0 25C -40C 85C 25 20 0.5 -40C 85C 1.0 1.5 2.0 GHz 2.5 3.0 3.5 0.5 1.0 1.5 2.0 GHz 2.5 3.0 3.5 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101442 Rev OBS Preliminary OBSOLETE NGA-689 DC-5.0 GHz 5.8V GaAs HBT Basic Application Circuit R BIAS 1 uF 1000 pF Application Circuit Element Values Reference Designator Frequency (Mhz) 500 850 1950 2400 3500 VS CD LC CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 1 4 NGA-689 3 CB RF out 2 Recommended Bias Resistor Values for ID=80mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 8V 27 9V 39 10 V 51 12 V 75 VS RBIAS N6 1 uF 1000 pF Note: RBIAS provides DC bias stability over temperature. Mounting Instructions 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. LC CD CB CB Part Identification Marking The part will be marked with an N6 designator on the top surface of the package. 4 Pin # 1 Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. N6 1 2 3 2 2, 4 GND 3 For package dimensions, refer to outline drawing at www.sirenza.com RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. 1 3 Caution: ESD sensitive Part Number Ordering Information Part Number NGA-689 Reel Size 7" Devices/Reel 1000 Appropriate precautions in handling, packaging and testing devices must be observed. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101442 Rev OBS Preliminary OBSOLETE NGA-689 DC-5.0 GHz 5.8V GaAs HBT PCB Pad Layout Dimensions in inches [millimeters] Dimensions in inches [millimeters] Refer to package drawing posted at www.sirenza.com for tolerances. Nominal Package Dimensions Bottom View Side View 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-101442 Rev OBS |
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